1/6 target data january 2003 STGW40NC60V n-channel 40a - 600v to-247 powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n very high frequency operation applications n high frequency inverters n smps and pfc in both hard switch and resonant topologies n ups n welding absolute maximum ratings ( )pulse width limited by safe operating area type v ces v ce(sat) i c STGW40NC60V 600 v < 2.5 v40a symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 80 a i c collector current (continuous) at t c =100c 40 a i cm ( ) collector current (pulsed) 300 a p tot total dissipation at t c = 25c tbd w derating factor tbd w/c t stg storage temperature C 55 to 150 c t j max. operating junction temperature 150 c to-247 1 2 3 internal schematic diagram
STGW40NC60V 2/6 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 1.04 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 250 a v ce = max rating, t c = 125 c tbd a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 250 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250 a 345v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =40a,tj=25c 1.92 2.5 v v ge =15 v, i c = 40 a, tj =125c 1.7 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =40a tbd s c ies input capacitance v ce = 25 v, f= 1 mhz, v ge =0 4500 pf c oes output capacitance 350 pf c res reverse transfer capacitance 100 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c =40a, v ge =15v tbd tbd tbd nc nc nc i cl latching current v clamp = 480 v , tj = 150c r g =10 w tbd a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c =40a r g =10 w ,v ge =15v tbd tbd ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =40a r g =5 w, v ge =15v, tj =125c 2100 810 a/s j
3/6 STGW40NC60V electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t r (v off ) off voltage rise time v cc = 480 v, i c =40a, r ge =5 w ,v ge =15v t j =25c 28 ns t d ( off ) delay time 170 ns t f fall time 65 ns e off (**) turn-off switching loss 940 m j e ts total switching loss 1750 m j t r (v off ) off voltage rise time v cc = 480 v, i c =40a, r ge =5 w ,v ge =15v tj = 125 c 54 ns t d ( off ) delay time 210 ns t f fall time 90 ns e off (**) turn-off switching loss 1400 m j e ts total switching loss 2200 m j
STGW40NC60V 4/6 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/6 STGW40NC60V dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5o 5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
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